IRG5K100HF12B datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available on our website
SOT-23
IRG5K100HF12B Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mount
Chassis Mount
Mounting Type
Chassis Mount
Package / Case
POWIR® 62 Module
Operating Temperature
-40°C~150°C TJ
Published
2014
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Max Power Dissipation
780W
Configuration
Half Bridge
Power - Max
780W
Input
Standard
Collector Emitter Voltage (VCEO)
2.6V
Max Collector Current
200A
Current - Collector Cutoff (Max)
2mA
Collector Emitter Breakdown Voltage
1.2kV
Voltage - Collector Emitter Breakdown (Max)
1200V
Input Capacitance
11.7nF
Vce(on) (Max) @ Vge, Ic
2.6V @ 15V, 100A
NTC Thermistor
No
Input Capacitance (Cies) @ Vce
11.7nF @ 25V
RoHS Status
RoHS Compliant
IRG5K100HF12B Product Details
IRG5K100HF12B Description
IRG5K100HF12B is a single IGBT with a break down voltage of 1200V from Infineon Technologies. IRG5K100HF12B operates between -40°C~150°C, and its Current - Collector (Ic) (Max) is 200A. The IRG5K100HF12B has 3 pins and it is available in POWIR? 62 Module packaging way. IRG5K100HF12B has a 1200V Voltage - Collector Emitter Breakdown (Max) value.
IRG5K100HF12B Features
Input Capacitance (Cies) @ Vce: 11.7nF @ 25V
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 100A
Voltage - Collector Emitter Breakdown (Max): 1200V