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IRG5K200HF12B

IRG5K200HF12B

IRG5K200HF12B

Infineon Technologies

IRG5K200HF12B datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available on our website

SOT-23

IRG5K200HF12B Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mount Chassis Mount
Mounting Type Chassis Mount
Package / Case POWIR® 62 Module
Operating Temperature -40°C~150°C TJ
Published 2014
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Power Dissipation 1.25kW
Configuration Half Bridge
Power - Max 1250W
Input Standard
Collector Emitter Voltage (VCEO) 2.6V
Max Collector Current 400A
Current - Collector Cutoff (Max) 2mA
Collector Emitter Breakdown Voltage 1.2kV
Voltage - Collector Emitter Breakdown (Max) 1200V
Input Capacitance 26nF
Vce(on) (Max) @ Vge, Ic 2.6V @ 15V, 200A
NTC Thermistor No
Input Capacitance (Cies) @ Vce 26nF @ 25V
RoHS Status RoHS Compliant
IRG5K200HF12B Product Details

IRG5K200HF12B Description


IRG5K200HF12B is a single IGBT with a Voltage - Collector Emitter Breakdown (Max) of 1200V from Infineon Technologies. IRG5K200HF12B operates between -40°C~150°C TJ, and its Max Collector Current is 400A. The IRG5K200HF12B has 3 pins and it is available in Tube packaging way. IRG5K200HF12B has a 1200V Voltage - Collector Emitter Breakdown (Max) value.



IRG5K200HF12B Features


  • Input Capacitance (Cies) @ Vce: 26nF @ 25V

  • Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 200A

  • Voltage - Collector Emitter Breakdown (Max): 1200V

  • Collector Emitter Voltage (VCEO): 2.6V

  • Collector Emitter Breakdown Voltage: 1.2kV



IRG5K200HF12B Applications


  • Power Management

  • Consumer Electronics

  • Portable Devices

  • Industrial


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