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IRG7T100HF12B

  • IRG7T100HF12B
  • IRG7T100HF12B

IRG7T100HF12B

IRG7T100HF12B

Infineon Technologies

IRG7T100HF12B datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available on our website

SOT-23

IRG7T100HF12B Datasheet

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In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mount Chassis Mount
Mounting Type Chassis Mount
Package / Case POWIR® 62 Module
Operating Temperature -40°C~150°C TJ
Published 2014
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Power Dissipation 680W
Configuration Half Bridge
Power - Max 680W
Input Standard
Collector Emitter Voltage (VCEO) 2.2V
Max Collector Current 200A
Current - Collector Cutoff (Max) 2mA
Collector Emitter Breakdown Voltage 1.2kV
Voltage - Collector Emitter Breakdown (Max) 1200V
Input Capacitance 13nF
Vce(on) (Max) @ Vge, Ic 2.2V @ 15V, 100A
NTC Thermistor No
Input Capacitance (Cies) @ Vce 13nF @ 25V
RoHS Status RoHS Compliant
IRG7T100HF12B Product Details

IRG7T100HF12B Description


The IRG7T100HF12B is an IGBT Half-Bridge Powir 62 ? Package.



IRG7T100HF12B Features


  • Low VCE(ON) and Switching Losses

  • High Efficiency in a Wide Range of Applications

  • RBSOA Tested

  • 10μsec Short Circuit Safe Operating Area

  • POWIR 62" Package

  • Industry Standard



IRG7T100HF12B Applications


  • Industrial Motor Drive

  • Uninterruptible Power Supply

  • Welding and Cutting Machine

  • Switched Mode Power Supply

  • Induction Heating


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