IRG7T200HF12B Description

IRG7T200HF12B is a single IGBT with a Voltage - Collector Emitter Breakdown (Max) of 1200V from Infineon Technologies. IRG7T200HF12B operates between -40°C~150°C, and its Current - Collector Cutoff (Max) is 400A. The IRG7T200HF12B has 3 pins and it is available in Module packaging way. IRG7T200HF12B has a 1200V Voltage - Collector Emitter Breakdown (Max) value.

IRG7T200HF12B Features

• Input Capacitance (Cies) @ Vce: 22.4nF @ 25V

• Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 200A

• Voltage - Collector Emitter Breakdown (Max): 1200V

• Collector Emitter Voltage (VCEO): 2.2V

• Collector Emitter Breakdown Voltage: 1.2kV

IRG7T200HF12B Applications

• Power Management

• Consumer Electronics

• Portable Devices

• Industrial