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IRGC4660B

  • IRGC4660B
  • IRGC4660B

IRGC4660B

IRGC4660B

Infineon Technologies

IRGC4660B datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website

SOT-23

IRGC4660B Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 15 Weeks
Mounting Type Surface Mount
Package / Case Die
Operating Temperature -55°C~175°C TJ
Packaging Bulk
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Input Type Standard
Reverse Recovery Time 45ns
Voltage - Collector Emitter Breakdown (Max) 600V
Current - Collector (Ic) (Max) 48A
IGBT Type Trench Field Stop
RoHS Status ROHS3 Compliant
IRGC4660B Product Details

IRGC4660B Description


The IRGC4660B is an Insulated Gate Bipolar Transistor with  600V 35A Die on Film/Wafer.



IRGC4660B Features


  • Trench Field Stop Technology

  • Operating Temperature:-55°C~175°C TJ

  • Optimized for High-Speed Switching



IRGC4660B Applications


  • Solar Inverters


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