IRL1404S datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website
SOT-23
IRL1404S Datasheet
non-compliant
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Specifications
Name
Value
Type
Parameter
Mounting Type
Surface Mount
Package / Case
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Operating Temperature
-55°C~175°C TJ
Packaging
Tube
Published
2002
Series
HEXFET®
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN Code
EAR99
Technology
MOSFET (Metal Oxide)
Power Dissipation-Max
3.8W Ta 200W Tc
FET Type
N-Channel
Rds On (Max) @ Id, Vgs
4m Ω @ 95A, 10V
Vgs(th) (Max) @ Id
3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
6600pF @ 25V
Current - Continuous Drain (Id) @ 25°C
160A Tc
Gate Charge (Qg) (Max) @ Vgs
140nC @ 5V
Drain to Source Voltage (Vdss)
40V
Drive Voltage (Max Rds On,Min Rds On)
4.3V 10V
Vgs (Max)
±20V
RoHS Status
Non-RoHS Compliant
IRL1404S Product Details
IRL1404S Description
IRL1404S is an N-channel Power MOSFET transistor from the manufacturer Infineon Technologies with a voltage of 40V. The operating temperature of the IRL1404S is -55°C~175°C TJ and its maximum power dissipation is 3.8W Ta. IRL1404S has 2 pins and it is available in Tube packaging way. The Drain to Source Voltage (Vdss) of the IRL1404S is 40V.
IRL1404S Features
Planar cell structure for wide SOA
Optimized for broadest availability from distribution partners
Product qualification according to JEDEC standard
Silicon optimized for applications switching below <100kHz
Industry standard surface-mount power package
High-current carrying capability package (up to 195 A, die-size dependent)
Capable of being wave-soldered
IRL1404S Applications
Optimized for broadest availability from distribution partners
Product qualification according to JEDEC standard
Logic level : Optimized for 10 V gate drive voltage, capable of 4.5 V gate drive voltage
Industry standard surface-mount power package
High-current carrying capability package (up to 195 A, die-size dependent)