IRLH5030TR2PBF

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IRLH5030TR2PBF

Manufacturer part number:IRLH5030TR2PBF

Manufacturer:Infineon Technologies

Description:IRLH5030TR2PBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website

Case Package:SOT-23

Datasheet:IRLH5030TR2PBF Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-PowerVDFN
Number of Pins	8
Supplier Device Package	PQFN (5x6) Single Die
Packaging	Cut Tape (CT)
Published	2010
Series	HEXFET®
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Max Power Dissipation	3.6W
Technology	MOSFET (Metal Oxide)
Number of Elements	1
Power Dissipation	250W
Turn On Delay Time	21 ns
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	9mOhm @ 50A, 10V
Vgs(th) (Max) @ Id	2.5V @ 150μA
Input Capacitance (Ciss) (Max) @ Vds	5185pF @ 50V
Current - Continuous Drain (Id) @ 25°C	13A Ta 100A Tc
Gate Charge (Qg) (Max) @ Vgs	94nC @ 10V
Rise Time	72ns
Drain to Source Voltage (Vdss)	100V
Fall Time (Typ)	41 ns
Turn-Off Delay Time	41 ns
Continuous Drain Current (ID)	100A
Threshold Voltage	2.5V
Gate to Source Voltage (Vgs)	16V
Drain to Source Breakdown Voltage	100V
Input Capacitance	5.185nF
Recovery Time	48 ns
Drain to Source Resistance	9.9mOhm
Rds On Max	9 mΩ
Nominal Vgs	2.5 V
Height	990.6μm
Length	6.1468mm
Width	5.15mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	RoHS Compliant