IRLML2502TR datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website
SOT-23
IRLML2502TR Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Surface Mount
YES
Transistor Element Material
SILICON
Packaging
Cut Tape (CT)
Published
2003
Series
HEXFET®
JESD-609 Code
e3
Part Status
Discontinued
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn)
Additional Feature
HIGH RELIABILITY
Subcategory
FET General Purpose Power
Technology
MOSFET (Metal Oxide)
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
[email protected] Reflow Temperature-Max (s)
30
JESD-30 Code
R-PDSO-G3
Qualification Status
Not Qualified
Operating Temperature (Max)
150°C
Number of Elements
1
Configuration
SINGLE WITH BUILT-IN DIODE
Operating Mode
ENHANCEMENT MODE
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
45m Ω @ 4.2A, 4.5V
Vgs(th) (Max) @ Id
1.2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
740pF @ 15V
Current - Continuous Drain (Id) @ 25°C
4.2A Ta
Gate Charge (Qg) (Max) @ Vgs
12nC @ 5V
Drain to Source Voltage (Vdss)
20V
JEDEC-95 Code
TO-236AB
Drain Current-Max (Abs) (ID)
4.2A
Drain-source On Resistance-Max
0.045Ohm
Pulsed Drain Current-Max (IDM)
33A
DS Breakdown Voltage-Min
20V
Power Dissipation-Max (Abs)
1.25W
RoHS Status
Non-RoHS Compliant
IRLML2502TR Product Details
IRLML2502TR Description
International Rectifier's N-Channel MOSFETs use innovative processing techniques to achieve extraordinarily low on-resistance per silicon area. This benefit, when paired with the high switching speed and ruggedized device design of HEXFET Power MOSFETs, gives the designer an exceptionally efficient and reliable device for battery and load control.