IRLML5203 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website
SOT-23
IRLML5203 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Surface Mount
YES
Transistor Element Material
SILICON
Packaging
Tube
Published
2003
Series
HEXFET®
JESD-609 Code
e3
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn)
Subcategory
Other Transistors
Technology
MOSFET (Metal Oxide)
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
JESD-30 Code
R-PDSO-G3
Qualification Status
Not Qualified
Operating Temperature (Max)
150°C
Number of Elements
1
Configuration
SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max
1.25W Ta
Operating Mode
ENHANCEMENT MODE
FET Type
P-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
98m Ω @ 3A, 10V
Vgs(th) (Max) @ Id
2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
510pF @ 25V
Current - Continuous Drain (Id) @ 25°C
3A Ta
Gate Charge (Qg) (Max) @ Vgs
14nC @ 10V
Drain to Source Voltage (Vdss)
30V
Drive Voltage (Max Rds On,Min Rds On)
4.5V 10V
Vgs (Max)
±20V
Drain Current-Max (Abs) (ID)
3A
Drain-source On Resistance-Max
0.098Ohm
Pulsed Drain Current-Max (IDM)
24A
DS Breakdown Voltage-Min
30V
RoHS Status
Non-RoHS Compliant
IRLML5203 Product Details
IRLML5203 Description
IRLML5203 is a HEXFET Power MOSFET manufactured by Infineon. The P-channel MOSFET IRLML5203 from International Rectifier utilizes advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications. The Operating and Storage Temperature Range is between -55 and 150℃. And the MOSFET IRLML5203 is in the TO-252-3 package with 101w power dissipation.