Name: IRLR2908PBF
Brand: Infineon Technologies
SKU: IRLR2908PBF
Availability: InStock

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IRLR2908PBF

Manufacturer part number:IRLR2908PBF

Manufacturer:Infineon Technologies

Description:IRLR2908PBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website

Case Package:SOT-23

Datasheet:IRLR2908PBF Datasheet PDF

RoHs Status:non-compliant

Parameter Name	Value
Type	Parameter
Factory Lead Time	39 Weeks
Mounting Type	Surface Mount
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Published	2010
Series	HEXFET®
Part Status	Discontinued
Moisture Sensitivity Level (MSL)	1 (Unlimited)
ECCN Code	EAR99
Technology	MOSFET (Metal Oxide)
Power Dissipation-Max	120W Tc
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	28m Ω @ 23A, 10V
Vgs(th) (Max) @ Id	2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	1890pF @ 25V
Current - Continuous Drain (Id) @ 25°C	30A Tc
Gate Charge (Qg) (Max) @ Vgs	33nC @ 4.5V
Drain to Source Voltage (Vdss)	80V
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±16V
RoHS Status	ROHS3 Compliant

IRLR2908PBF Product Details

IRLR2908PBF Description

IRLR2908PBF is an 80V Single N-Channel HEXFET Power MOSFET in a D-Pak package. The IRLR2908PBF Power MOSFET is designed using the latest processing techniques in order to achieve extremely low on-resistance per silicon area. Additionally, this HEXFET power MOSFET is characterized by a junction operating temperature of 175°C, a low R*JC, a fast switching speed, and improved repeated avalanche resistance. With these features combined, this design can be used in a wide range of applications due to its efficiency and reliability.