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IRLR2908PBF

  • IRLR2908PBF
  • IRLR2908PBF

IRLR2908PBF

IRLR2908PBF

Infineon Technologies

IRLR2908PBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website

SOT-23

IRLR2908PBF Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 39 Weeks
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2010
Series HEXFET®
Part Status Discontinued
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 120W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 28m Ω @ 23A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1890pF @ 25V
Current - Continuous Drain (Id) @ 25°C 30A Tc
Gate Charge (Qg) (Max) @ Vgs 33nC @ 4.5V
Drain to Source Voltage (Vdss) 80V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±16V
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.941630 $0.94163
10 $0.888330 $8.8833
100 $0.838047 $83.8047
500 $0.790611 $395.3055
1000 $0.745859 $745.859
IRLR2908PBF Product Details

IRLR2908PBF Description

IRLR2908PBF is an 80V Single N-Channel HEXFET Power MOSFET in a D-Pak package. The IRLR2908PBF Power MOSFET is designed using the latest processing techniques in order to achieve extremely low on-resistance per silicon area. Additionally, this HEXFET power MOSFET is characterized by a junction operating temperature of 175°C, a low R*JC, a fast switching speed, and improved repeated avalanche resistance. With these features combined, this design can be used in a wide range of applications due to its efficiency and reliability.


IRLR2908PBF Features

  • Logic Level

  • RoHS Compliant

  • Industry-leading quality

  • Dynamic dv/dt Rating

  • Fast Switching

  • Fully Avalanche Rated

  • 175°C Operating Temperature


IRLR2908PBF Applications

  • Commercial and Industrial Applications

  • Fast Switching

  • Amplification Purpose


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