IRLR3715ZPBF

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IRLR3715ZPBF

Manufacturer part number:IRLR3715ZPBF

Manufacturer:Infineon Technologies

Description:IRLR3715ZPBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website

Case Package:SOT-23

Datasheet:IRLR3715ZPBF Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Published	2004
Series	HEXFET®
JESD-609 Code	e3
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Resistance	11MOhm
Terminal Finish	Matte Tin (Sn) - with Nickel (Ni) barrier
Subcategory	FET General Purpose Power
Voltage - Rated DC	20V
Technology	MOSFET (Metal Oxide)
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
Current Rating	49A
[email protected] Reflow Temperature-Max (s)	30
JESD-30 Code	R-PSSO-G2
Number of Elements	1
Power Dissipation-Max	40W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	40W
Case Connection	DRAIN
Turn On Delay Time	7.8 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	11m Ω @ 15A, 10V
Vgs(th) (Max) @ Id	2.55V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	810pF @ 10V
Current - Continuous Drain (Id) @ 25°C	49A Tc
Gate Charge (Qg) (Max) @ Vgs	11nC @ 4.5V
Rise Time	13ns
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Fall Time (Typ)	4.3 ns
Turn-Off Delay Time	10 ns
Continuous Drain Current (ID)	49A
Threshold Voltage	2.1V
JEDEC-95 Code	TO-252AA
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	20V
Pulsed Drain Current-Max (IDM)	200A
Recovery Time	17 ns
Height	2.26mm
Length	6.7056mm
Width	6.22mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	RoHS Compliant
Lead Free	Lead Free