IRLR8721TRPBF

new-10%

Manufacturer part number:IRLR8721TRPBF

Manufacturer:Infineon Technologies

Description:MOSFET N-CH 30V 65A DPAK

Case Package:SOT-23

Datasheet:IRLR8721TRPBF Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	12 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tape & Reel (TR)
Published	2009
Series	HEXFET®
JESD-609 Code	e3
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Resistance	8.4MOhm
Terminal Finish	Matte Tin (Sn) - with Nickel (Ni) barrier
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Position	SINGLE
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	30
JESD-30 Code	R-PSSO-G2
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	65W Tc
Operating Mode	ENHANCEMENT MODE
Power Dissipation	65W
Case Connection	DRAIN
Turn On Delay Time	8.8 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	8.4m Ω @ 25A, 10V
Vgs(th) (Max) @ Id	2.35V @ 25μA
Input Capacitance (Ciss) (Max) @ Vds	1030pF @ 15V
Current - Continuous Drain (Id) @ 25°C	65A Tc
Gate Charge (Qg) (Max) @ Vgs	13nC @ 4.5V
Rise Time	30ns
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Fall Time (Typ)	6.5 ns
Turn-Off Delay Time	9.4 ns
Continuous Drain Current (ID)	65A
JEDEC-95 Code	TO-252AA
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	30V
Pulsed Drain Current-Max (IDM)	260A
Height	2.3876mm
Length	6.7056mm
Width	6.22mm
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free