IRLS4030PBF

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IRLS4030PBF

Manufacturer part number:IRLS4030PBF

Manufacturer:Infineon Technologies

Description:IRLS4030PBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website

Case Package:SOT-23

Datasheet:IRLS4030PBF Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Published	2009
Series	HEXFET®
JESD-609 Code	e3
Part Status	Discontinued
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
Termination	SMD/SMT
ECCN Code	EAR99
Resistance	4.3MOhm
Terminal Finish	Matte Tin (Sn) - with Nickel (Ni) barrier
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	30
JESD-30 Code	R-PSSO-G2
Number of Elements	1
Power Dissipation-Max	370W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	370W
Turn On Delay Time	74 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	4.3m Ω @ 110A, 10V
Vgs(th) (Max) @ Id	2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	11360pF @ 50V
Current - Continuous Drain (Id) @ 25°C	180A Tc
Gate Charge (Qg) (Max) @ Vgs	130nC @ 4.5V
Rise Time	330ns
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±16V
Fall Time (Typ)	170 ns
Turn-Off Delay Time	110 ns
Continuous Drain Current (ID)	190A
Threshold Voltage	2.5V
Gate to Source Voltage (Vgs)	16V
Drain to Source Breakdown Voltage	100V
Dual Supply Voltage	100V
Nominal Vgs	2.5 V
Height	4.572mm
Length	10.668mm
Width	9.65mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free