IRLSL3036PBF

new-10%

Manufacturer part number:IRLSL3036PBF

Manufacturer:Infineon Technologies

Description:MOSFET N-CH 60V 195A TO262

Case Package:SOT-23

Datasheet:IRLSL3036PBF Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	15 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-262-3 Long Leads, I2Pak, TO-262AA
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Published	2008
Series	HEXFET®
JESD-609 Code	e3
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Resistance	2.4MOhm
Terminal Finish	Matte Tin (Sn) - with Nickel (Ni) barrier
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	40
Number of Elements	1
Power Dissipation-Max	380W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	380W
Case Connection	DRAIN
Turn On Delay Time	66 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	2.4m Ω @ 165A, 10V
Vgs(th) (Max) @ Id	2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	11210pF @ 50V
Current - Continuous Drain (Id) @ 25°C	195A Tc
Gate Charge (Qg) (Max) @ Vgs	140nC @ 4.5V
Rise Time	220ns
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±16V
Fall Time (Typ)	110 ns
Turn-Off Delay Time	110 ns
Continuous Drain Current (ID)	195A
Gate to Source Voltage (Vgs)	16V
Drain Current-Max (Abs) (ID)	270A
Drain to Source Breakdown Voltage	60V
Avalanche Energy Rating (Eas)	290 mJ
Height	9.652mm
Length	10.668mm
Width	4.826mm
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free