IRLU2905ZPBF

new-10%

IRLU2905ZPBF

Manufacturer part number:IRLU2905ZPBF

Manufacturer:Infineon Technologies

Description:MOSFET N-CH 55V 42A I-PAK

Case Package:SOT-23

Datasheet:IRLU2905ZPBF Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	15 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-251-3 Short Leads, IPak, TO-251AA
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Published	2006
Series	HEXFET®
JESD-609 Code	e3
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Termination	Through Hole
ECCN Code	EAR99
Terminal Finish	Matte Tin (Sn) - with Nickel (Ni) barrier
Additional Feature	AVALANCHE RATED, HIGH RELIABILITY, LOGIC LEVEL COMPATIBLE, ULTRA-LOW RESISTANCE
Subcategory	FET General Purpose Power
Voltage - Rated DC	55V
Technology	MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel)	260
Current Rating	42A
[email protected] Reflow Temperature-Max (s)	30
Number of Elements	1
Power Dissipation-Max	110W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	110W
Case Connection	DRAIN
Turn On Delay Time	14 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	13.5m Ω @ 36A, 10V
Vgs(th) (Max) @ Id	3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	1570pF @ 25V
Current - Continuous Drain (Id) @ 25°C	42A Tc
Gate Charge (Qg) (Max) @ Vgs	35nC @ 5V
Rise Time	130ns
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±16V
Fall Time (Typ)	33 ns
Turn-Off Delay Time	24 ns
Reverse Recovery Time	22 ns
Continuous Drain Current (ID)	60A
Threshold Voltage	1V
Gate to Source Voltage (Vgs)	16V
Drain to Source Breakdown Voltage	55V
Pulsed Drain Current-Max (IDM)	240A
Dual Supply Voltage	55V
Avalanche Energy Rating (Eas)	85 mJ
Height	6.22mm
Length	6.7056mm
Width	2.3876mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free