Surface Mount Tape & Reel (TR) Active Gate Drivers ICs CMOS 1 200V V 14-VFQFN Exposed Pad Half-Bridge
SOT-23
IRS2008MTRPBFAUMA1 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
18 Weeks
Mounting Type
Surface Mount
Package / Case
14-VFQFN Exposed Pad
Operating Temperature
-40°C~125°C TA
Packaging
Tape & Reel (TR)
Part Status
Active
Moisture Sensitivity Level (MSL)
2 (1 Year)
Voltage - Supply
10V~20V
Input Type
CMOS
Rise / Fall Time (Typ)
70ns 30ns
Channel Type
Synchronous
Number of Drivers
1
Driven Configuration
Half-Bridge
Gate Type
IGBT, N-Channel MOSFET
Current - Peak Output (Source, Sink)
290mA 600mA
Logic Voltage - VIL, VIH
0.8V 2.5V
High Side Voltage - Max (Bootstrap)
200V
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.998000
$0.998
10
$0.941509
$9.41509
100
$0.888216
$88.8216
500
$0.837940
$418.97
1000
$0.790509
$790.509
IRS2008MTRPBFAUMA1 Product Details
IRS2008MTRPBFAUMA1 Overview
In order to increase flexibility, the package 14-VFQFN Exposed Pad is used.Tape & Reel (TR) is the packaging method.This configuration includes 1 drivers.Surface Mount is mounted in the way.When the supply voltage is set to 10V~20V, it can demonstrate its superiority.Gate type IGBT, N-Channel MOSFET is designed for it.The allowable temperature range that this device can be operated in is -40°C~125°C TA.The input type is CMOS.A boot strap voltage of 200V is the maximum possible high-side voltage.
IRS2008MTRPBFAUMA1 Features
Embedded in the Tape & Reel (TR) package 1 drivers Employing a gate type of IGBT, N-Channel MOSFET High-side voltage - Max (Bootstrap) of 200V
IRS2008MTRPBFAUMA1 Applications
There are a lot of Infineon Technologies IRS2008MTRPBFAUMA1 gate drivers applications.