PS3GFANSET30600NOSA1 Description

The PS3GFANSET30600NOSA1 is an IGBT Module. The BJT and MOSFET are combined to form the IGBT or Insulated Gate Bipolar Transistor. Its name also alluded to their union. The term "Insulated Gate" describes a MOSFET's extremely high input impedance. It relies on the voltage at its gate terminal to operate rather than drawing any input current. When a BJT's output portion is described as "bipolar," it means that both different types of charge carriers contribute to the current flow. It enables it to operate with extremely high currents and voltages while utilizing low-voltage signals. The IGBT is a voltage-controlled device as a result of this hybrid arrangement.

PS3GFANSET30600NOSA1 Features

• It has higher voltage and current handling capabilities.

• It has a very high input impedance.

• It can switch very high currents using very low voltage.

• It is voltage-controlled i.e. it has no input current and low input losses.

• The gate drive circuitry is simple and cheap.

PS3GFANSET30600NOSA1 Applications

• It is used in AC and DC motor drives offering speed control.

• It is used in chopper and inverters.

• It is used in solar inverters.

• It is used in SMPS (Switched Mode Power Supply) to supply power to sensitive medical equipment and computers.

• It is used in UPS (Uninterruptible Power Supply) system.