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PTMA210452ELV1

PTMA210452ELV1

PTMA210452ELV1

Infineon Technologies

28 dB NARROW BAND HIGH POWER 2.2GHz

SOT-23

PTMA210452ELV1 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mount Screw
Number of Pins 8
Max Operating Temperature 150°C
Min Operating Temperature -40°C
Number of Functions 1
Frequency 2.2GHz
Element Configuration Single
Continuous Drain Current (ID) 450mA
Gate to Source Voltage (Vgs) 12V
Gain 28 dB
RF/Microwave Device Type NARROW BAND HIGH POWER
Drain to Source Breakdown Voltage 65V
Power - Output 3.2W
RoHS Status RoHS Compliant
PTMA210452ELV1 Product Details

PTMA210452ELV1 Overview


RF Amplifier with cost-effective NARROW BAND HIGH POWER RF/Microwave Device Type.8 pins are present on the high power RF Amplifier.1 functions (s) are included in the RF Amplifier.There should be 150°C temperature above 150°C degrees Celsius when it runs.

PTMA210452ELV1 Features


NARROW BAND HIGH POWER RF/Microwave Amplifier
8 pins


PTMA210452ELV1 Applications


There are a lot of Infineon Technologies
PTMA210452ELV1 RF Amplifiers applications.


  • Recreational
  • Marine Navigation
  • Avionics
  • GPS
  • GLONASS
  • BeiDou
  • Galileo
  • Wireless communications
  • ISM applications
  • Wireless infrastructure

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