PZTA42E6327HTSA1 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Infineon Technologies stock available on our website
SOT-23
PZTA42E6327HTSA1 Datasheet
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Specifications
Name
Value
Type
Parameter
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-261-4, TO-261AA
Number of Pins
4
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Published
2011
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
4
ECCN Code
EAR99
Max Power Dissipation
1.5W
Terminal Position
DUAL
Terminal Form
GULL WING
Base Part Number
PZTA42
Number of Elements
1
Configuration
SINGLE
Case Connection
COLLECTOR
Power - Max
1.5W
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
300V
Max Collector Current
500mA
DC Current Gain (hFE) (Min) @ Ic, Vce
40 @ 30mA 10V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
500mV @ 2mA, 20mA
Collector Emitter Breakdown Voltage
300V
Transition Frequency
70MHz
Frequency - Transition
70MHz
Collector Base Voltage (VCBO)
300V
hFE Min
40
Radiation Hardening
No
RoHS Status
RoHS Compliant
PZTA42E6327HTSA1 Product Details
PZTA42E6327HTSA1 Overview
This device has a DC current gain of 40 @ 30mA 10V, which is the ratio between the base current and the collector current.When VCE saturation is 500mV @ 2mA, 20mA, transistor means Ic has reached transistors maximum value (saturated).The part has a transition frequency of 70MHz.Maximum collector currents can be below 500mA volts.
PZTA42E6327HTSA1 Features
the DC current gain for this device is 40 @ 30mA 10V the vce saturation(Max) is 500mV @ 2mA, 20mA a transition frequency of 70MHz
PZTA42E6327HTSA1 Applications
There are a lot of Infineon Technologies PZTA42E6327HTSA1 applications of single BJT transistors.