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PZTA42E6327HTSA1

PZTA42E6327HTSA1

PZTA42E6327HTSA1

Infineon Technologies

PZTA42E6327HTSA1 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Infineon Technologies stock available on our website

SOT-23

PZTA42E6327HTSA1 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-261-4, TO-261AA
Number of Pins 4
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2011
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
ECCN Code EAR99
Max Power Dissipation 1.5W
Terminal Position DUAL
Terminal Form GULL WING
Base Part Number PZTA42
Number of Elements 1
Configuration SINGLE
Case Connection COLLECTOR
Power - Max 1.5W
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 300V
Max Collector Current 500mA
DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 30mA 10V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 500mV @ 2mA, 20mA
Collector Emitter Breakdown Voltage 300V
Transition Frequency 70MHz
Frequency - Transition 70MHz
Collector Base Voltage (VCBO) 300V
hFE Min 40
Radiation Hardening No
RoHS Status RoHS Compliant
PZTA42E6327HTSA1 Product Details

PZTA42E6327HTSA1 Overview


This device has a DC current gain of 40 @ 30mA 10V, which is the ratio between the base current and the collector current.When VCE saturation is 500mV @ 2mA, 20mA, transistor means Ic has reached transistors maximum value (saturated).The part has a transition frequency of 70MHz.Maximum collector currents can be below 500mA volts.

PZTA42E6327HTSA1 Features


the DC current gain for this device is 40 @ 30mA 10V
the vce saturation(Max) is 500mV @ 2mA, 20mA
a transition frequency of 70MHz

PZTA42E6327HTSA1 Applications


There are a lot of Infineon Technologies PZTA42E6327HTSA1 applications of single BJT transistors.

  • Muting
  • Inverter
  • Driver
  • Interface

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