SPA03N60C3XKSA1

new-10%

Manufacturer part number:SPA03N60C3XKSA1

Manufacturer:Infineon Technologies

Description:MOSFET N-CH 650V 3.2A TO-220

Case Package:SOT-23

Datasheet:SPA03N60C3XKSA1 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mounting Type	Through Hole
Package / Case	TO-220-3 Full Pack
Surface Mount	NO
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2005
Series	CoolMOS™
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Additional Feature	AVALANCHE RATED
Voltage - Rated DC	650V
Technology	MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Current Rating	3.2A
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	3
Qualification Status	Not Qualified
Number of Elements	1
Power Dissipation-Max	29.7W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	29.7W
Case Connection	ISOLATED
Turn On Delay Time	7 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	1.4 Ω @ 2A, 10V
Vgs(th) (Max) @ Id	3.9V @ 135μA
Halogen Free	Halogen Free
Input Capacitance (Ciss) (Max) @ Vds	400pF @ 25V
Current - Continuous Drain (Id) @ 25°C	3.2A Tc
Gate Charge (Qg) (Max) @ Vgs	17nC @ 10V
Rise Time	3ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	12 ns
Turn-Off Delay Time	64 ns
Continuous Drain Current (ID)	3.2A
Threshold Voltage	3V
JEDEC-95 Code	TO-220AB
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	600V
Pulsed Drain Current-Max (IDM)	9.6A
Avalanche Energy Rating (Eas)	100 mJ
Height	9.45mm
Length	10.36mm
Width	4.57mm
REACH SVHC	No SVHC
RoHS Status	RoHS Compliant
Lead Free	Lead Free