SPD30N03S2L10GBTMA1

new-10%

Manufacturer part number:SPD30N03S2L10GBTMA1

Manufacturer:Infineon Technologies

Description:MOSFET N-CH 30V 30A TO252-3

Case Package:SOT-23

Datasheet:SPD30N03S2L10GBTMA1 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tape & Reel (TR)
Published	2002
Series	OptiMOS™
JESD-609 Code	e3
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Additional Feature	AVALANCHE RATED
Technology	MOSFET (Metal Oxide)
Terminal Position	SINGLE
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
JESD-30 Code	R-PSSO-G2
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	100W Tc
Operating Mode	ENHANCEMENT MODE
Power Dissipation	100W
Case Connection	DRAIN
Turn On Delay Time	6.1 ns
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	10m Ω @ 30A, 10V
Vgs(th) (Max) @ Id	2V @ 50μA
Input Capacitance (Ciss) (Max) @ Vds	1550pF @ 25V
Current - Continuous Drain (Id) @ 25°C	30A Tc
Gate Charge (Qg) (Max) @ Vgs	41.8nC @ 10V
Rise Time	13ns
Drain to Source Voltage (Vdss)	30V
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Fall Time (Typ)	17 ns
Turn-Off Delay Time	27 ns
Continuous Drain Current (ID)	30A
Gate to Source Voltage (Vgs)	20V
DS Breakdown Voltage-Min	30V
RoHS Status	RoHS Compliant