BSB013NE2LXI datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies AG stock available on our website
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BSB013NE2LXI Datasheet
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Specifications
Name
Value
Type
Parameter
Surface Mount
YES
Number of Terminals
3
Transistor Element Material
SILICON
JESD-609 Code
e4
Pbfree Code
icon-pbfree yes
Moisture Sensitivity Level (MSL)
3
ECCN Code
EAR99
Terminal Finish
Silver/Nickel (Ag/Ni)
HTS Code
8541.29.00.95
Subcategory
FET General Purpose Power
Terminal Position
BOTTOM
Terminal Form
NO LEAD
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Reach Compliance Code
compliant
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Pin Count
3
JESD-30 Code
R-MBCC-N3
Qualification Status
Not Qualified
Operating Temperature (Max)
150°C
Number of Elements
1
Configuration
SINGLE WITH BUILT-IN DIODE
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
Transistor Application
SWITCHING
Polarity/Channel Type
N-CHANNEL
Drain Current-Max (Abs) (ID)
163A
Drain-source On Resistance-Max
0.0018Ohm
Pulsed Drain Current-Max (IDM)
400A
DS Breakdown Voltage-Min
25V
Avalanche Energy Rating (Eas)
130 mJ
FET Technology
METAL-OXIDE SEMICONDUCTOR
Power Dissipation-Max (Abs)
57W
RoHS Status
RoHS Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$1.855000
$1.855
10
$1.750000
$17.5
100
$1.650943
$165.0943
500
$1.557494
$778.747
1000
$1.469334
$1469.334
BSB013NE2LXI Product Details
BSB013NE2LXI Description
BSB013NE2LXI is a 25v OptiMOS? Power-MOSFET. Ultra-low gate and output charge, together with the lowest on-state resistance in small footprint packages, make BSB013NE2LXI the best choice for the demanding requirements of voltage regulator solutions in servers, datacom, and telecom applications. The Operating and Storage Temperature Range is between -40 and 150℃. And the MOSFET BSB013NE2LXI is in the WDSON-2-3 package with 57W power dissipation.
BSB013NE2LXI Features
Optimized SyncFET for high-performance Buck converter