BSB044N08NN3 G

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Manufacturer part number:BSB044N08NN3 G

Manufacturer:Infineon Technologies AG

Description:BSB044N08NN3 G datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies AG stock available on our website

Case Package:SOT-23

Datasheet:BSB044N08NN3 G Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Surface Mount	YES
Number of Terminals	3
Transistor Element Material	SILICON
JESD-609 Code	e4
Pbfree Code	icon-pbfree yes
Moisture Sensitivity Level (MSL)	3
ECCN Code	EAR99
Terminal Finish	Silver/Nickel (Ag/Ni)
Terminal Position	BOTTOM
Terminal Form	NO LEAD
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Reach Compliance Code	compliant
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	3
JESD-30 Code	R-MBCC-N3
Qualification Status	Not Qualified
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Operating Mode	ENHANCEMENT MODE
Case Connection	DRAIN
Transistor Application	SWITCHING
Polarity/Channel Type	N-CHANNEL
Drain Current-Max (Abs) (ID)	18A
Drain-source On Resistance-Max	0.0044Ohm
Pulsed Drain Current-Max (IDM)	360A
DS Breakdown Voltage-Min	80V
Avalanche Energy Rating (Eas)	660 mJ
FET Technology	METAL-OXIDE SEMICONDUCTOR
RoHS Status	RoHS Compliant

Quantity	Unit Price	Ext. Price
1	$3.638000	$3.638
10	$3.432075	$34.32075
100	$3.237807	$323.7807
500	$3.054535	$1527.2675
1000	$2.881637	$2881.637

BSB044N08NN3 G Description

The BSB044N08NN3 G is an N-channel Power MOSFET with performance-leading benchmark OptiMOS? technology. It is the market leader in highly efficient solutions for power generation, power supply, and power consumption applications. The operating and storage temperature is between -40 and +150??. The Infineon BSB044N08NN3 G is in the WDSON-2-3 package with 78w.