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BSC072N03LD G

BSC072N03LD G

BSC072N03LD G

Infineon Technologies AG

BSC072N03LD G datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from Infineon Technologies AG stock available on our website

SOT-23

BSC072N03LD G Datasheet

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Specifications
Name Value
Type Parameter
Surface Mount YES
Number of Terminals 6
Transistor Element Material SILICON
JESD-609 Code e3
Pbfree Code icon-pbfree yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Additional Feature AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
Subcategory FET General Purpose Power
Terminal Position DUAL
Terminal Form FLAT
Peak Reflow Temperature (Cel) 260
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 8
JESD-30 Code R-PDSO-F6
Qualification Status Not Qualified
Operating Temperature (Max) 150°C
Number of Elements 2
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Transistor Application SWITCHING
Polarity/Channel Type N-CHANNEL
Drain Current-Max (Abs) (ID) 20A
Drain-source On Resistance-Max 0.0094Ohm
Pulsed Drain Current-Max (IDM) 80A
DS Breakdown Voltage-Min 30V
Avalanche Energy Rating (Eas) 90 mJ
FET Technology METAL-OXIDE SEMICONDUCTOR
Power Dissipation-Max (Abs) 57W
RoHS Status RoHS Compliant
BSC072N03LD G Product Details

BSC072N03LD G Description


The Infineon Technologies BSC072N03LD G is an N-Channel Power MOSFET making OptiMOS? 25V the best choice for the demanding requirements of voltage regulator solutions in servers, datacom and telecom applications.



BSC072N03LD G Features


  • Ultra-low gate and output charge

  • Lowest on-state resistance in small footprint packages

  • Easy to design in



BSC072N03LD G Applications


  • Onboard charger

  • Notebook

  • Mainboard

  • DC-DC

  • VRD/VRM

  • Motor control

  • LED


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