DF160R12W2H3F_B11

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DF160R12W2H3F_B11

Manufacturer part number:DF160R12W2H3F_B11

Manufacturer:Infineon Technologies AG

Description:DF160R12W2H3F_B11 datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies AG stock available on our website

Case Package:SOT-23

Datasheet:DF160R12W2H3F_B11 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
ECCN (US)	EAR99
Typical Collector Emitter Saturation Voltage (V)	1.55
Maximum Collector-Emitter Voltage (V)	1200
Maximum Power Dissipation (mW)	190000
Maximum Gate Emitter Voltage (V)	±20
Maximum Continuous Collector Current (A)	20
Maximum Gate Emitter Leakage Current (uA)	0.1
Minimum Operating Temperature (°C)	-40
Maximum Operating Temperature (°C)	150
AEC Qualified	No
Supplier Package	EASY2B-2
Military	No
Mounting	Screw
Package Height	12
Package Length	62.8
Package Width	56.7
PCB changed	25
Packaging	Tray
Part Status	Active
Pin Count	25
Configuration	Quad
Channel Type	N
RoHS Status	Yes with exemptions