F180101SV1XT

new-10%

F180101SV1XT

Manufacturer part number:F180101SV1XT

Manufacturer:Infineon Technologies AG

Description:F180101SV1XT datasheet pdf and Transistors - FETs, MOSFETs - RF product details from Infineon Technologies AG stock available on our website

Case Package:SOT-23

Datasheet:F180101SV1XT Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
ECCN (US)	EAR99
Channel Mode	Enhancement
Number of Elements per Chip	1
Process Technology	LDMOS
Maximum Drain Source Voltage (V)	65
Maximum Gate Source Voltage (V)	12
Maximum VSWR	10
Maximum Gate Source Leakage Current (nA)	1000
Maximum IDSS (uA)	1
Maximum Drain Source Resistance (mOhm)	830(Typ)@10V
Maximum Power Dissipation (mW)	58000
Output Power (W)	10
Typical Power Gain (dB)	19
Maximum Frequency (MHz)	2170
Minimum Frequency (MHz)	1805
Typical Drain Efficiency (%)	37
Minimum Operating Temperature (°C)	-40
Maximum Operating Temperature (°C)	200
AEC Qualified	No
Supplier Package	Case 32259
Military	No
Mounting	Surface Mount
Package Height	2.88
Package Length	7.37
Package Width	6.86
PCB changed	3
Packaging	Tape and Reel
Part Status	Obsolete
Pin Count	3
Configuration	Single
Channel Type	N
Mode of Operation	CW\|W-CDMA\|2-Tone\|EDGE