FF150R12KE3G datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies AG stock available on our website
SOT-23
FF150R12KE3G Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Surface Mount
NO
Number of Terminals
7
Transistor Element Material
SILICON
Pbfree Code
icon-pbfree yes
ECCN Code
EAR99
Subcategory
Insulated Gate BIP Transistors
Terminal Position
UPPER
Terminal Form
UNSPECIFIED
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Reach Compliance Code
compliant
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Pin Count
7
JESD-30 Code
R-XUFM-X7
Qualification Status
Not Qualified
Operating Temperature (Max)
150°C
Number of Elements
2
Configuration
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE
Case Connection
ISOLATED
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (Abs)
780W
Turn On Time
400 ns
Collector Current-Max (IC)
225A
Turn Off Time-Nom (toff)
830 ns
Collector-Emitter Voltage-Max
1200V
Gate-Emitter Voltage-Max
20V
VCEsat-Max
2.15 V
RoHS Status
RoHS Compliant
FF150R12KE3G Product Details
FF150R12KE3G Description
The Infineon Technologies AG FF150R12KE3G is a 62 mm 1200 V, 150 A dual IGBT module with TRENCHSTOP? IGBT3 and emitter controlled high-efficiency diode.
FF150R12KE3G Features
UL/CSA Certification with UL1557 E83336
Operating temperature up to 125 °C (max 150 °C)
Optimized switching characteristics like softness and reduced switching losses
Superior solution for frequency controlled inverter drives