FF150R12KS4 datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies AG stock available on our website
SOT-23
FF150R12KS4 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Surface Mount
NO
Number of Terminals
7
Transistor Element Material
SILICON
Pbfree Code
icon-pbfree yes
ECCN Code
EAR99
Additional Feature
FAST
Terminal Position
UPPER
Terminal Form
UNSPECIFIED
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Reach Compliance Code
compliant
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Pin Count
7
JESD-30 Code
R-XUFM-X7
Qualification Status
Not Qualified
Operating Temperature (Max)
150°C
Number of Elements
2
Configuration
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE
Case Connection
ISOLATED
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (Abs)
1200W
Turn On Time
180 ns
Collector Current-Max (IC)
225A
Turn Off Time-Nom (toff)
590 ns
Collector-Emitter Voltage-Max
1200V
Gate-Emitter Voltage-Max
20V
VCEsat-Max
3.7 V
RoHS Status
RoHS Compliant
FF150R12KS4 Product Details
FF150R12KS4 Description
FF150R12KS4 is a 1200 V, 150 A dual IGBT module with the fast IGBT2 for high-frequency switching and is available with M5 power terminals. The IGBT has a low switching loss and low saturation voltage due to its Non-Punch Through (NPT) Technology, allowing it to be used in low voltage switching driver designs with excellent switching efficiency.