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FF200R06KE3

  • FF200R06KE3
  • FF200R06KE3

FF200R06KE3

FF200R06KE3

Infineon Technologies AG

FF200R06KE3 datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies AG stock available on our website

SOT-23

FF200R06KE3 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Surface Mount NO
Number of Terminals 7
Transistor Element Material SILICON
Pbfree Code icon-pbfree yes
ECCN Code EAR99
Subcategory Insulated Gate BIP Transistors
Terminal Position UPPER
Terminal Form UNSPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 7
JESD-30 Code R-XUFM-X7
Qualification Status Not Qualified
Operating Temperature (Max) 175°C
Number of Elements 2
Configuration SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE
Case Connection ISOLATED
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 680W
Turn On Time 190 ns
Collector Current-Max (IC) 260A
Turn Off Time-Nom (toff) 600 ns
Collector-Emitter Voltage-Max 600V
Gate-Emitter Voltage-Max 20V
VCEsat-Max 1.9 V
RoHS Status RoHS Compliant
FF200R06KE3 Product Details

FF200R06KE3 Description


FF200R06KE3 is an N-Channel IGBT Module transistor from the manufacturer of Infineon Technologies with a voltage of 600V. The operating temperature of FS100R12KE3_B3 is 175°C and its maximum power dissipation is 680W. FF200R06KE3 has 7 pins and it is available in Module packaging way. Pb?Free Package is Available and the storage temperature of FF200R06KE3 is ?65 to +150°C.



FF200R06KE3 Features


  • Subcategory: Insulated Gate BIP Transistors

  • JESD-30 Code: R-XUFM-X7 

  • Transistor Element Material: SILICON

  • Pb-free Code: icon-free yes



FF200R06KE3 Applications


  • General-purpose amplifier

  • Switching applications

  • Power management

  • Industrial


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