IPB025N08N3 G Description

The IPB025N08N3 G is an N-channel Power MOSFET with performance-leading benchmark OptiMOS? technology. The Infineon IPB025N08N3 G is the market leader in highly efficient solutions for power generation, power supply, and power consumption applications. The Operating and Storage Temperature Range is between -55 and 175℃. And the MOSFET IPB025N08N3 G is in the TO-263-3 package with 300W power dissipation.

IPB025N08N3 G Features

• Optimized technology for DC-to-DC converters

• Excellent gate charge x RDS (ON) product (FOM)

• Superior thermal resistance

• Dual-sided cooling

• Low parasitic inductance

• Normal level

• 100% avalanche tested

• Ideal for high-frequency switching and synchronous rectification

• Qualified according to JEDEC for target applications

• Halogen-free, Green device

IPB025N08N3 G Applications

• Power Management

• Consumer Electronics

• Communications & Networking

• Motor Drive & Control

• LED Lighting

• Automotive