IPI045N10N3 G Overview

This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 340 mJ.As shown in the table below, the drain current of this device is 100A.There is no pulsed drain current maximum for this device based on its rated peak drain current 400A.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 100V.

IPI045N10N3 G Features

the avalanche energy rating (Eas) is 340 mJ
based on its rated peak drain current 400A.

IPI045N10N3 G Applications

There are a lot of Infineon Technologies AG
IPI045N10N3 G applications of single MOSFETs transistors.

• Micro Solar Inverter
• DC/DC converters
• Power Tools
• Motor Drives and Uninterruptible Power Supples
• Synchronous Rectification
• Battery Protection Circuit
• Telecom 1 Sever Power Supplies
• Industrial Power Supplies
• PFC stages, hard switching PWM stages and resonant switching
• PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,