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PTFA080551EV4XWSA1

PTFA080551EV4XWSA1

PTFA080551EV4XWSA1

Infineon Technologies AG

PTFA080551EV4XWSA1 datasheet pdf and Transistors - FETs, MOSFETs - RF product details from Infineon Technologies AG stock available on our website

SOT-23

PTFA080551EV4XWSA1 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
ECCN (US) EAR99
Channel Mode Enhancement
Number of Elements per Chip 1
Process Technology LDMOS
Maximum Drain Source Voltage (V) 65
Maximum Gate Source Voltage (V) 12
Maximum VSWR 10
Maximum Drain Source Resistance (mOhm) 150(Typ)@10V
Maximum Power Dissipation (mW) 219000
Output Power (W) 55
Typical Power Gain (dB) 18.5
Maximum Frequency (MHz) 960
Minimum Frequency (MHz) 869
Typical Drain Efficiency (%) 48
Minimum Operating Temperature (°C) -40
Maximum Operating Temperature (°C) 200
AEC Qualified No
Supplier Package Case 36265
Military No
Mounting Screw
Package Height 3.61
Package Length 20.31
Package Width 10.16
PCB changed 3
Packaging Tray
Part Status Obsolete
Pin Count 3
Configuration Single
Channel Type N
Mode of Operation 2-Tone|EDGE
RoHS Status RoHS Compliant

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