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SIDC26D65C8X1SA1

SIDC26D65C8X1SA1

SIDC26D65C8X1SA1

Infineon Technologies AG

Wafer

SOT-23

SIDC26D65C8X1SA1 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Lifecycle Status Production (Last Updated: 2 years ago)
Package Quantity 1
ECCN (US) EAR99
HTS 8541.10.00.40
Maximum DC Reverse Voltage (V) 650
Peak Reverse Repetitive Voltage (V) 650
Maximum Continuous Forward Current (A) 100(Typ)
Peak Forward Voltage (V) 1.95
Peak Reverse Current (uA) 1.2
Minimum Operating Temperature (°C) -40
Maximum Operating Temperature (°C) 175
Standard Package Name Die
Supplier Package Die
Military No
Package Length 6.53
Package Width 4.02
PCB changed 2
RoHS Non-Compliant
PackagingWafer
Part StatusActive
Max Operating Temperature175 °C
Min Operating Temperature -40 °C
Pin Count2
Configuration Single
Forward Current100 A
Halogen Free Halogen Free
Drain to Source Voltage (Vdss) 650 V
Peak Reverse Current1.2 µA
Max Repetitive Reverse Voltage (Vrrm) 650 V
Max Dual Supply Voltage650 V
Reverse Voltage650 V
Diode Configuration Single
Max Forward Surge Current (Ifsm) 200 A
Max Junction Temperature (Tj) 175 °C
Repetitive Peak Reverse Voltage 650
RoHS StatusRoHS Compliant
Lead Free Lead Free
In-Stock:2090 items

SIDC26D65C8X1SA1 Product Details

SIDC26D65C8X1SA1 Overview


In accordance with the datasheets, the forward peak voltage is 1.95.Approximately 100(Typ) is the maximum continuous forward current consumed by this device at any given time.The DC reverse voltage used for operation must be less than 650.

SIDC26D65C8X1SA1 Features


the forward peak voltage is 1.95


SIDC26D65C8X1SA1 Applications


There are a lot of Infineon Technologies AG
SIDC26D65C8X1SA1 applications of RF diodes.


  • Clamping circuits
  • Diode ring mixer
  • RF detector
  • RF voltage doubler
  • Wearables
  • Smart metering
  • Set top boxes
  • RF attenuators and switches
  • Low-loss, high-power limiters
  • Receiver protectors

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