Welcome to Hotenda.com Online Store!

logo
userjoin
Home

IGN1011L1200

  • IGN1011L1200
  • IGN1011L1200

IGN1011L1200

IGN1011L1200

Integra Technologies Inc.

GAN, RF POWER TRANSISTOR, L-BAND

SOT-23

IGN1011L1200 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 4 Weeks
Surface Mount YES
Transistor Element Material GALLIUM NITRIDE
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
Terminal Position DUAL
Terminal Form FLAT
JESD-30 Code R-CDFM-F2
Operating Temperature (Min) -55°C
Number of Elements 1
Configuration SINGLE
Operating Mode DEPLETION MODE
Case Connection SOURCE
Transistor Application AMPLIFIER
Polarity/Channel Type N-CHANNEL
DS Breakdown Voltage-Min 180V
FET Technology HIGH ELECTRON MOBILITY
Highest Frequency Band L B
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $914.14000 $914.14
500 $904.9986 $452499.3
1000 $895.8572 $895857.2
1500 $886.7158 $1330073.7
2000 $877.5744 $1755148.8
2500 $868.433 $2171082.5

Related Part Number

PD57030-E
STMicroelectronics
PD57030-E
$0 $/piece
BLA9H0912L-700U
Ampleon USA Inc.
BLA9H0912L-700U
$0 $/piece
VRF141
Microsemi Corporation
VRF141
$0 $/piece
BLF178P,112
Ampleon USA Inc.
BLF178P,112
$0 $/piece
PTVA123501FC-V1-R0
Cree/Wolfspeed
PTVA123501FC-V1-R0
$0 $/piece
BG3130H6327XTSA1
Infineon Technologies
BG3130H6327XTSA1
$0 $/piece
BLF8G22LS-240J
Ampleon USA Inc.
BLF8G22LS-240J
$0 $/piece
CGH55015F1
Cree/Wolfspeed
CGH55015F1
$0 $/piece
BLF8G22LS-205VJ
Ampleon USA Inc.
BLF8G22LS-205VJ
$0 $/piece
BLS6G2731-6G,112
Ampleon USA Inc.
BLS6G2731-6G,112
$0 $/piece
view all related

Get Subscriber

Enter Your Email Address, Get the Latest News