BURST COUNTER; SELF TIMED WRITE; ADDRESS REGISTER; BYTE WRITE CONTROL
HTS Code
8542.32.00.41
Terminal Position
QUAD
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
240
Number of Functions
1
Supply Voltage
3.3V
Terminal Pitch
0.65mm
Reach Compliance Code
not_compliant
Time@Peak Reflow Temperature-Max (s)
20
Pin Count
100
JESD-30 Code
R-PQFP-G100
Qualification Status
Not Qualified
Supply Voltage-Max (Vsup)
3.63V
Temperature Grade
COMMERCIAL
Supply Voltage-Min (Vsup)
3.135V
Interface
Parallel
Number of Ports
1
Memory Type
RAM, SRAM
Operating Mode
SYNCHRONOUS
Organization
32KX32
Output Characteristics
3-STATE
Memory Width
32
Memory Density
1048576 bit
Access Time (Max)
10 ns
Output Enable
YES
Length
20mm
Height Seated (Max)
1.6mm
Width
14mm
RoHS Status
Non-RoHS Compliant
IDT71V432S10PF Product Details
IDT71V432S10PF Overview
A RAM, SRAM-type memory can be classified as the memory type of this device. Embedded in the LQFP case, memory ics is a single file. A total of 100 terminations have been planted on the chip. The comprehensive working procedure of this part involves 1 functions. In order to power this memory device, 3.3V will be necessary. The memory device in question has 100 pins, thus indicating that it has 100 memory locations that can be accessed. This chip features all the merits of a conventional chip, but it also features BURST COUNTER; SELF TIMED WRITE; ADDRESS REGISTER; BYTE WRITE CONTROL to improve system performance. 1 ports allow read/write access to one memory address in this chip. There must not be a minimum operating temperature of less than 0°C for this device. A temperature of no more than 70°C centigrade is recommended for the component to be operated, otherwise, damage might be inflicted on the component.