N-Channel 400mOhm @ 4A, 10V ±20V 600 pF @ 25 V 15 nC @ 10 V 60 V TO-204AA, TO-3
SOT-23
IRF123 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mounting Type
Through Hole
Package / Case
TO-204AA, TO-3
Supplier Device Package
TO-3
Mfr
International Rectifier
Package
Bulk
Power Dissipation (Max)
40W (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Product Status
Active
Series
-
Operating Temperature
-55°C ~ 150°C (TJ)
FET Type
N-Channel
Rds On (Max) @ Id, Vgs
400mOhm @ 4A, 10V
Vgs(th) (Max) @ Id
4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
600 pF @ 25 V
Current - Continuous Drain (Id) @ 25°C
7A (Tc)
Gate Charge (Qg) (Max) @ Vgs
15 nC @ 10 V
Drain to Source Voltage (Vdss)
60 V
Vgs (Max)
±20V
FET Feature
-
IRF123 Product Details
IRF123 Overview
Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 600 pF @ 25 V.In order to operate this transistor, a voltage of 60 V is needed from the drain to the source (Vdss).
IRF123 Features
a 60 V drain to source voltage (Vdss)
IRF123 Applications
There are a lot of International Rectifier IRF123 applications of single MOSFETs transistors.
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU