IRLML6401TRPBF-1 Description

Advanced processing techniques are used in these P-Channel MOSFETs from International Rectifier to achieve exceptionally low on-resistance per silicon area. This feature gives the designer a very effective and dependable device for use in battery and load management, in addition to the quick switching speed and ruggedized device design that HEXFET® power MOSFETs are widely recognized for.

IRLML6401TRPBF-1 Features

• Low Profile (1.1mm) Ultra Low On-Resistance P-Channel MOSFET Footprint SOT-23 available on reel & tape

• Quick Switching

• Rated at 1.8V Gate

• Halogen-Free, Lead-Free, and RoHS Compliant

IRLML6401TRPBF-1 Applications

Switching applications