IS26KL128S-DABLI00

join

new-10%

Manufacturer part number:IS26KL128S-DABLI00

Manufacturer:ISSI, Integrated Silicon Solution Inc

Description:Memory IC 8mm mm

Case Package:SOT-23

Datasheet:IS26KL128S-DABLI00 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	2 Weeks
Mounting Type	Surface Mount
Package / Case	24-VBGA
Surface Mount	YES
Operating Temperature	-40°C~85°C TA
Packaging	Tray
Part Status	Active
Moisture Sensitivity Level (MSL)	3 (168 Hours)
Number of Terminations	24
Technology	FLASH - NOR
Voltage - Supply	2.7V~3.6V
Terminal Position	BOTTOM
Number of Functions	1
Supply Voltage	3V
Terminal Pitch	1mm
JESD-30 Code	R-PBGA-B24
Supply Voltage-Max (Vsup)	3.6V
Supply Voltage-Min (Vsup)	2.7V
Memory Size	128Mb 16M x 8
Memory Type	Non-Volatile
Operating Mode	SYNCHRONOUS
Clock Frequency	100MHz
Access Time	96ns
Memory Format	FLASH
Memory Interface	Parallel
Organization	16MX8
Memory Width	8
Memory Density	134217728 bit
Programming Voltage	3V
Height Seated (Max)	1mm
Length	8mm
Width	6mm
RoHS Status	ROHS3 Compliant

Quantity	Unit Price	Ext. Price
1	$7.159655	$7.159655
10	$6.754392	$67.54392
100	$6.372068	$637.2068
500	$6.011385	$3005.6925
1000	$5.671118	$5671.118

IS26KL128S-DABLI00 Overview

In this case, the memory type of the device can be classified as Non-Volatile. In addition, memory ics is available in a Tray case as well. The case is embedded in 24-VBGA. There is 128Mb 16M x 8 of memory on the chip. This device utilizes a FLASH format memory which is of mainstream design. Due to its extended operating temperature range, the device is well suited for a wide range of demanding applications. The device is capable of handling a supply voltage of 2.7V~3.6V. As far as the mounting type is concerned, Surface Mount is recommended. It is planted on the chip with 24 terminations. In total, this part supports 1 functions. In order to power this memory device, 3V will be necessary. In the memory, there is a clock frequency rotation that ranges 100MHz. There is a need for a programming voltage of 3V in order to modify the state of some nonvolatile memory arrays.