DE475-102N21A

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Manufacturer part number:DE475-102N21A

Manufacturer:IXYS

Description:DE475-102N21A datasheet pdf and Transistors - FETs, MOSFETs - RF product details from IXYS stock available on our website

Case Package:SOT-23

Datasheet:DE475-102N21A Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Package / Case	6-SMD, Flat Lead Exposed Pad
Supplier Device Package	DE475
HTS	8541.29.00.95
Channel Mode	Enhancement
Number of Elements per Chip	1
Maximum Drain Source Voltage (V)	1000
Maximum Gate Source Voltage (V)	±20
Maximum Continuous Drain Current (A)	24
Maximum Drain Source Resistance (mOhm)	450@15V
Typical Gate Charge @ Vgs (nC)	155@10V
Typical Input Capacitance @ Vds (pF)	5500@800V
Typical Reverse Transfer Capacitance @ Vds (pF)	52@800V
Typical Output Capacitance @ Vds (pF)	190@800V
Maximum Power Dissipation (mW)	1800000
Typical Turn-Off Delay Time (ns)	5
Typical Turn-On Delay Time (ns)	5
Minimum Operating Temperature (°C)	-55
Maximum Operating Temperature (°C)	175
Military	No
Mounting	Surface Mount
Package Height	3.18
Package Length	21.08
Package Width	23.24
PCB changed	6
Package	Tube
Base Product Number	DE475
Mfr	IXYS-RF
Product Status	Obsolete
Manufacturer	IXYS Corporation
Series	DE
Pbfree Code	Yes
Part Status	Acquired
ECCN Code	EAR99
Type	MOSFET
Voltage - Rated	1000 V
Subcategory	FET General Purpose Power
Current Rating (Amps)	24A
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Reach Compliance Code	compliant
Frequency	-
Pin Count	6
Qualification Status	Not Qualified
Configuration	Single Quad Source
Transistor Type	N-Channel
Gain	-
Channel Type	N
Power - Output	1800W
Noise Figure	-
Highest Frequency Band	VERY HIGH FREQUENCY BAND
RoHS Status	RoHS Compliant