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DHG55I3300FE

DHG55I3300FE

DHG55I3300FE

IXYS

POWER DIODE DISCRETES-SONIC I4-P

SOT-23

DHG55I3300FE Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 20 Weeks
Mounting Type Through Hole
Package / Case i4-Pac™-5 (2 Leads)
PackagingTube
Part StatusActive
Speed Standard Recovery >500ns, > 200mA (Io)
Diode Type Standard
Current - Reverse Leakage @ Vr 100μA @ 3300V
Voltage - Forward (Vf) (Max) @ If 3.4V @ 60A
Operating Temperature - Junction -40°C~150°C
Voltage - DC Reverse (Vr) (Max) 3300V
Current - Average Rectified (Io) 50A
Reverse Recovery Time 1.65μs
Capacitance @ Vr, F 16pF @ 1.8kV 1MHz
In-Stock:183 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$40.16000$40.16
500$39.7584$19879.2
1000$39.3568$39356.8
1500$38.9552$58432.8
2000$38.5536$77107.2
2500$38.152$95380

About DHG55I3300FE

The DHG55I3300FE from IXYS is a high-performance microcontroller designed for a wide range of embedded applications. This component features POWER DIODE DISCRETES-SONIC I4-P.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the DHG55I3300FE, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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