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DNA30E2200PZ-TRL

DNA30E2200PZ-TRL

DNA30E2200PZ-TRL

IXYS

DIODE GEN PURP 2.2KV 30A TO263

SOT-23

DNA30E2200PZ-TRL Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Surface Mount YES
Diode Element Material SILICON
Packaging Tape & Reel (TR)
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
Additional Feature LOW LEAKAGE CURRENT, PD-CASE
Terminal Position SINGLE
Terminal Form GULL WING
Base Part Number DNA30E2200
Reference Standard IEC-60747
JESD-30 Code R-PSSO-G2
Operating Temperature (Max) 150°C
Number of Elements 1
Configuration SINGLE
Power Dissipation-Max 210W
Speed Standard Recovery >500ns, > 200mA (Io)
Diode Type Standard
Current - Reverse Leakage @ Vr 40μA @ 2200V
Voltage - Forward (Vf) (Max) @ If 1.26V @ 30A
Case Connection ANODE
Operating Temperature - Junction -55°C~150°C
Output Current-Max 30A
Application HIGH VOLTAGE
Voltage - DC Reverse (Vr) (Max) 2200V
Current - Average Rectified (Io) 30A
Number of Phases 1
Rep Pk Reverse Voltage-Max 2200V
Capacitance @ Vr, F 7pF @ 700V 1MHz
Non-rep Pk Forward Current-Max 340A
Reverse Current-Max 40μA
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $4.700000 $4.7
10 $4.433962 $44.33962
100 $4.182983 $418.2983
500 $3.946211 $1973.1055
1000 $3.722840 $3722.84

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