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FII30-12E

  • FII30-12E
  • FII30-12E

FII30-12E

FII30-12E

IXYS

IGBT PHASE TOP ISOPLUS I4-PAC-5

SOT-23

FII30-12E Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mount Through Hole
Mounting Type Through Hole
Package / Case i4-Pac™-5
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Published 2005
JESD-609 Code e1
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Additional Feature HIGH RELIABILITY, UL RECOGNIZED
Max Power Dissipation 150W
Terminal Position SINGLE
Pin Count 5
JESD-30 Code R-PSIP-T5
Number of Elements 2
Configuration Half Bridge
Element Configuration Dual
Case Connection ISOLATED
Power - Max 150W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Input Standard
Collector Emitter Voltage (VCEO) 2.9V
Max Collector Current 33A
Current - Collector Cutoff (Max) 200μA
Collector Emitter Breakdown Voltage 1.2kV
Voltage - Collector Emitter Breakdown (Max) 1200V
Input Capacitance 1.2nF
Turn On Time 310 ns
Vce(on) (Max) @ Vge, Ic 2.9V @ 15V, 20A
Turn Off Time-Nom (toff) 495 ns
IGBT Type NPT
NTC Thermistor No
Input Capacitance (Cies) @ Vce 1.2nF @ 25V
RoHS Status RoHS Compliant

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