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IXFE44N50QD3

IXFE44N50QD3

IXFE44N50QD3

IXYS

MOSFET N-CH 500V 39A SOT-227B

SOT-23

IXFE44N50QD3 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mount Chassis Mount
Mounting Type Chassis Mount
Package / Case SOT-227-4, miniBLOC
Number of Pins 4
Transistor Element Material SILICON
Operating Temperature -40°C~150°C TJ
Packaging Tube
Published 2004
Series HiPerFET™
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position UPPER
Terminal Form UNSPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 4
Qualification Status Not Qualified
Number of Elements 1
Power Dissipation-Max 400W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 400W
Case Connection ISOLATED
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 120m Ω @ 22A, 10V
Vgs(th) (Max) @ Id 4V @ 4mA
Input Capacitance (Ciss) (Max) @ Vds 8000pF @ 25V
Current - Continuous Drain (Id) @ 25°C 39A Tc
Gate Charge (Qg) (Max) @ Vgs 190nC @ 10V
Rise Time 22ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 10 ns
Turn-Off Delay Time 75 ns
Continuous Drain Current (ID) 39A
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.12Ohm
Drain to Source Breakdown Voltage 500V
Pulsed Drain Current-Max (IDM) 176A
Avalanche Energy Rating (Eas) 2500 mJ
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
10 $33.35600 $333.56

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