IXFH11N80

new-10%

Manufacturer part number:IXFH11N80

Manufacturer:IXYS

Description:MOSFET N-CH 800V 11A TO-247AD

Case Package:SOT-23

Datasheet:IXFH11N80 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-247-3
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2000
Series	HiPerFET™
Pbfree Code	yes
Part Status	Active
Number of Terminations	3
Resistance	950mOhm
Additional Feature	AVALANCHE RATED
Subcategory	FET General Purpose Power
Voltage - Rated DC	800V
Technology	MOSFET (Metal Oxide)
Current Rating	11A
Pin Count	3
Number of Elements	1
Power Dissipation-Max	300W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	300W
Case Connection	DRAIN
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	950m Ω @ 500mA, 10V
Vgs(th) (Max) @ Id	4.5V @ 4mA
Input Capacitance (Ciss) (Max) @ Vds	4200pF @ 25V
Current - Continuous Drain (Id) @ 25°C	11A Tc
Gate Charge (Qg) (Max) @ Vgs	155nC @ 10V
Rise Time	33ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	32 ns
Turn-Off Delay Time	63 ns
Continuous Drain Current (ID)	11A
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	800V
Pulsed Drain Current-Max (IDM)	44A
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free