IXFH12N100Q

new-10%

Manufacturer part number:IXFH12N100Q

Manufacturer:IXYS

Description:MOSFET N-CH 1000V 12A TO-247AD

Case Package:SOT-23

Datasheet:IXFH12N100Q Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-247-3
Number of Pins	3
Weight	6g
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2003
Series	HiPerFET™
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Termination	Through Hole
ECCN Code	EAR99
Resistance	1.05Ohm
Additional Feature	AVALANCHE RATED
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Pin Count	3
Number of Elements	1
Power Dissipation-Max	300W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	300W
Case Connection	DRAIN
Turn On Delay Time	20 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	1.05 Ω @ 6A, 10V
Vgs(th) (Max) @ Id	5.5V @ 4mA
Input Capacitance (Ciss) (Max) @ Vds	2900pF @ 25V
Current - Continuous Drain (Id) @ 25°C	12A Tc
Gate Charge (Qg) (Max) @ Vgs	90nC @ 10V
Rise Time	23ns
Drain to Source Voltage (Vdss)	1000V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	15 ns
Turn-Off Delay Time	40 ns
Continuous Drain Current (ID)	12A
Threshold Voltage	5.5V
JEDEC-95 Code	TO-247AD
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	1kV
Pulsed Drain Current-Max (IDM)	48A
Dual Supply Voltage	1kV
Nominal Vgs	5.5 V
Height	21.46mm
Length	16.26mm
Width	5.3mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant