IXFH36N55Q2

new-10%

Manufacturer part number:IXFH36N55Q2

Manufacturer:IXYS

Description:MOSFET N-CH 550V 36A TO-247

Case Package:SOT-23

Datasheet:IXFH36N55Q2 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-247-3
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2004
Series	HiPerFET™
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Additional Feature	AVALANCHE RATED
Technology	MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	3
Qualification Status	Not Qualified
Number of Elements	1
Power Dissipation-Max	560W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	560W
Case Connection	DRAIN
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	180m Ω @ 500mA, 10V
Vgs(th) (Max) @ Id	5V @ 4mA
Input Capacitance (Ciss) (Max) @ Vds	4100pF @ 25V
Current - Continuous Drain (Id) @ 25°C	36A Tc
Gate Charge (Qg) (Max) @ Vgs	110nC @ 10V
Rise Time	13ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V
Fall Time (Typ)	8 ns
Turn-Off Delay Time	42 ns
Continuous Drain Current (ID)	36A
JEDEC-95 Code	TO-247AD
Gate to Source Voltage (Vgs)	30V
Drain-source On Resistance-Max	0.16Ohm
Drain to Source Breakdown Voltage	550V
Pulsed Drain Current-Max (IDM)	144A
Avalanche Energy Rating (Eas)	2500 mJ
RoHS Status	ROHS3 Compliant