IXFK16N90Q

new-10%

Manufacturer part number:IXFK16N90Q

Manufacturer:IXYS

Description:MOSFET N-CH 900V 16A TO-264AA

Case Package:SOT-23

Datasheet:IXFK16N90Q Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-264-3, TO-264AA
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2002
Series	HiPerFET™
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Additional Feature	AVALANCHE RATED
Technology	MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	3
Qualification Status	Not Qualified
Number of Elements	1
Power Dissipation-Max	360W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	360W
Case Connection	DRAIN
Turn On Delay Time	21 ns
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	650m Ω @ 8A, 10V
Vgs(th) (Max) @ Id	5V @ 4mA
Input Capacitance (Ciss) (Max) @ Vds	4000pF @ 25V
Current - Continuous Drain (Id) @ 25°C	16A Tc
Gate Charge (Qg) (Max) @ Vgs	170nC @ 10V
Rise Time	24ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	14 ns
Turn-Off Delay Time	56 ns
Continuous Drain Current (ID)	16A
Gate to Source Voltage (Vgs)	20V
Drain-source On Resistance-Max	0.65Ohm
Drain to Source Breakdown Voltage	900V
Pulsed Drain Current-Max (IDM)	64A
Avalanche Energy Rating (Eas)	1500 mJ
Height	26.16mm
Length	19.96mm
Width	5.13mm
RoHS Status	ROHS3 Compliant