IXFN210N30X3

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Manufacturer part number:IXFN210N30X3

Manufacturer:IXYS

Description:MOSFET (Metal Oxide) N-Channel Tube 4.6m Ω @ 105A, 10V ±20V 24200pF @ 25V 375nC @ 10V 300V SOT-227-4, miniBLOC

Case Package:SOT-23

Datasheet:IXFN210N30X3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	19 Weeks
Mounting Type	Chassis Mount
Package / Case	SOT-227-4, miniBLOC
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Series	HiPerFET™
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Technology	MOSFET (Metal Oxide)
Reach Compliance Code	compliant
Power Dissipation-Max	695W Tc
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	4.6m Ω @ 105A, 10V
Vgs(th) (Max) @ Id	4.5V @ 8mA
Input Capacitance (Ciss) (Max) @ Vds	24200pF @ 25V
Current - Continuous Drain (Id) @ 25°C	210A Tc
Gate Charge (Qg) (Max) @ Vgs	375nC @ 10V
Drain to Source Voltage (Vdss)	300V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V

Quantity	Unit Price	Ext. Price
1	$34.46000	$34.46
10	$31.87600	$318.76
100	$27.22340	$2722.34

IXFN210N30X3 Overview

Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 24200pF @ 25V maximal input capacitance.To operate this transistor, you will need a 300V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (10V).