IXFN32N120P

new-10%

Manufacturer part number:IXFN32N120P

Manufacturer:IXYS

Description:MOSFET N-CH 1200V 32A SOT-227B

Case Package:SOT-23

Datasheet:IXFN32N120P Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	20 Weeks
Mount	Chassis Mount, Screw
Mounting Type	Chassis Mount
Package / Case	SOT-227-4, miniBLOC
Number of Pins	4
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2010
Series	Polar™
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	4
Terminal Finish	Nickel (Ni)
Additional Feature	AVALANCHE RATED, UL RECOGNIZED
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Position	UPPER
Terminal Form	UNSPECIFIED
Pin Count	4
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	1000W Tc
Operating Mode	ENHANCEMENT MODE
Power Dissipation	830W
Case Connection	ISOLATED
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	310m Ω @ 500mA, 10V
Vgs(th) (Max) @ Id	6.5V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds	21000pF @ 25V
Current - Continuous Drain (Id) @ 25°C	32A Tc
Gate Charge (Qg) (Max) @ Vgs	360nC @ 10V
Rise Time	62ns
Drain to Source Voltage (Vdss)	1200V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V
Fall Time (Typ)	48 ns
Turn-Off Delay Time	88 ns
Continuous Drain Current (ID)	32A
Gate to Source Voltage (Vgs)	30V
Drain to Source Breakdown Voltage	1.2kV
Avalanche Energy Rating (Eas)	2000 mJ
Radiation Hardening	No
RoHS Status	ROHS3 Compliant