IXFN34N100

new-10%

Manufacturer part number:IXFN34N100

Manufacturer:IXYS

Description:MOSFET N-CH 1000V 34A SOT-227B

Case Package:SOT-23

Datasheet:IXFN34N100 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Chassis Mount
Mounting Type	Chassis Mount
Package / Case	SOT-227-4, miniBLOC
Number of Pins	4
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2003
Series	HiPerFET™
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	4
Terminal Finish	Nickel (Ni)
Additional Feature	AVALANCHE RATED
Technology	MOSFET (Metal Oxide)
Terminal Position	UPPER
Terminal Form	UNSPECIFIED
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	4
Qualification Status	Not Qualified
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	700W Tc
Operating Mode	ENHANCEMENT MODE
Power Dissipation	700W
Case Connection	DRAIN
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	280m Ω @ 500mA, 10V
Vgs(th) (Max) @ Id	5.5V @ 8mA
Input Capacitance (Ciss) (Max) @ Vds	9200pF @ 25V
Current - Continuous Drain (Id) @ 25°C	34A Tc
Gate Charge (Qg) (Max) @ Vgs	380nC @ 10V
Rise Time	65ns
Drain to Source Voltage (Vdss)	1000V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	30 ns
Turn-Off Delay Time	110 ns
Continuous Drain Current (ID)	34A
Gate to Source Voltage (Vgs)	20V
Drain-source On Resistance-Max	0.28Ohm
Drain to Source Breakdown Voltage	1kV
Pulsed Drain Current-Max (IDM)	136A
RoHS Status	RoHS Compliant